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| TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information BVDSS/BVDGS (V) Pin Configuration Package Option TO-236AB (SOT-23) TN2124K1-G RDS(ON) max () VGS(th) max (V) DRAIN 240 15 2.0 -G indicates package is RoHS compliant (`Green') SOURCE GATE TO-236AB (SOT-23) (K1) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Value BVDSS BVDGS 20V -55OC to +150OC 300OC Product Marking N1CW W = Code for week sealed TO-236AB (SOT-23) (K1) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. TN2124 Thermal Characteristics Package TO-236AB (SOT-23) (K1) (continuous)(*) (mA) ID (pulsed) (mA) ID Power Dissipation @TA = 25OC (W) jc ( C/W) O ja ( C/W) O IDR(*) (mA) IDRM (mA) 134 250 0.36 200 350 134 250 Notes: * ID (continuous) is limited by max rated Tj . Electrical Characteristics (@25 C unless otherwise specified) O Sym BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Parameter Drain-to-source breakdown voltage Gate threshold voltage Change in VGS(th) with temperature Gate body leakage Zero gate voltage drain current ON-state drain current Static drain-to-source ON-state resistance Change in RDS(ON) with temperature Forward transductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON delay time Rise time Turn-OFF delay time Fall time Diode forward voltage drop Reverse recovery time Min 240 0.8 140 100 - Typ 0.1 0.7 170 38 9.0 3.0 4.0 2.0 7.0 9.0 400 Max 2.0 -5.5 100 1.0 100 30 15 1.0 50 15 5.0 7.0 5.0 10 12 1.8 - Units V V O Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID= 1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating, TA = 125C VGS = 4.5V, VDS = 25V VGS = 3.0V, ID = 25mA VGS = 4.5V, ID = 120mA VGS = 4.5V, ID = 120mA VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 25V, ID = 140mA, RGEN = 25 mV/ C VGS = VDS, ID= 1.0mA nA A A mA %/ C O mmho VDS = 25V, ID = 120mA pF ns V ns VGS = 0V, ISD = 120mA VGS = 0V, ISD = 120mA Notes: (1) All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) (2) All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 10V 90% INPUT 0V 10% t(ON) PULSE GENERATOR t(OFF) tr td(OFF) tF RL OUTPUT RGEN td(ON) VDD 10% 10% INPUT D.U.T. OUTPUT 0V 90% 90% 2 TN2124 Typical Performance Curves Output Characteristics 2.0 1.0 Saturation Characteristics 1.6 0.8 VGS = 10V 8V ID (amperes) 6V 4V 3V 1.2 ID (amperes) VGS = 10V 8V 6V 0.6 0.8 4V 0.4 3V 0.4 2V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 0.2 2V VDS (volts) Transconductance vs. Drain Current 1.0 VDS= 25V 0.8 1.6 2.0 VDS (volts) Power Dissipation vs. Temperature GFS (siemens) 0.4 -55OC PD (watts) 0.6 1.2 0.8 0.2 TA= 125 C 0 0 0.2 0.4 0.6 0.8 1.0 O 0.4 25 C 0.0 0 O SOT-23 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TA= 25OC TA ( C) Thermal Response Characteristics O Thermal Resistance (normalized) 0.8 ID (amperes) 1.0 SOT-23 (pulsed) 0.6 SOT-23 T A = 25OC P D = 0.36W 0.4 0.1 0.2 SOT-23 (DC) 0.01 0 10 100 1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 3 TN2124 Typical Performance Curves (cont.) BVDSS Variation with Temperature 50 1.1 40 On-Resistance vs. Drain Current VGS = 3V BVDSS (normalized) RDS(ON) (ohms) 30 1.0 20 VGS = 4.5V 10 0.9 0 -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1.0 Tj ( OC) Transfer Characteristics 1.0 1.4 0.8 ID (amperes) VTH and RDS Variation with Temperature 2.0 RDS(ON) @ 4.5V, 120mA 1.6 TA = -55OC ID (amperes) 25OC 0.6 1.2 1.2 1.0 0.8 0.8 0.4 VDS = 25V 0.2 0.6 0 0 2 4 6 8 10 -50 0 VGS(th) @ 1mA 0.4 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj ( OC) Gate Drive Dynamic Characteristics 8 75 C (picofarads) VGS (volts) f = 1MHz 50 6 4 CISS 25 VDS = 10V 100pF VDS = 40V 2 CRSS 0 0 10 20 COSS 0 30 40 0 32 pF 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 4 RDS(ON) (normalized) 125 C O VGS(th) (normalized) TN2124 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E 0.25 Gauge Plane 1 e e1 2 b L L1 Seating Plane Top View A View B View B A A2 Seating Plane A1 Side View A View A-A Symbol MIN Dimension (mm) NOM MAX A 0.89 1.12 A1 0.01 0.10 A2 0.88 0.95 1.02 b 0.30 0.50 D 2.80 2.90 3.04 E 2.10 2.64 E1 1.20 1.30 1.40 e 0.95 BSC e1 1.90 BSC L 0.40 0.50 0.60 L1 0.54 REF 0O 8O JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. Drawings not to scale. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TN2124 B101107 5 |
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